Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. I. Simulation

Journal of Crystal Growth

Volumn 74, Issue 3, 1986, Pages 605-624

  Derby, J J ^a   Brown, R A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 46149141788     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(86)90208-3     Document Type: Article

References (55)

1. The direction of growth of the surface of a crystal in contact with its melt
2. Capillary Phenomena. III. Properties of Rotationally Symmetric Fluid Bodies with One Asymptote - Holms
3. Theory of molten zone shape and stability
4. Comparison of finite element calculations and experimental measurements in edge-defined film-fed growth of silicon sheets
5. Some Defects in Crystals Grown from the Melt. I. Defects Caused by Thermal Stresses
6. Maximum growth rates for melt-grown ribbon-shaped crystals
7. Macroscopic Interface Shape During Solidification
8. The Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method
9. The Numerical Analyses of the Solid-Liquid Interface Shapes during the Crystal Growth by the Czochralski Method
10. Theoretical studies of the temperature distribution in a crystal being grown by the czochralski method
11. Numerical simulation of free and forced convection in the classical Czochralski method and in CACRT
12. Multiple Byoyancy-Driven Flows in a Vertical Cylinder Heated from below
13. Thermal analysis of LEC InP growth