Some peculiarities of development of efficient thermoelectrics based on silicon compounds

International Conference on Thermoelectrics, ICT, Proceedings

Volumn , Issue , 2006, Pages 111-114

  Fedorov, M I ^a   Zaitsev, V K ^a   Vedernikov, M V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

(100) SILICON; COMPLEX STRUCTURES; CURRENT CARRIERS; EFFECTIVE MASSES; EN ERGY SPECTRUM; ENERGY BANDS; FIGURE-OF-MERIT (FOM); INTERNATIONAL CONFERENCES;

SILICON COMPOUNDS;

EID: 46149123742     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICT.2006.331293     Document Type: Conference Paper

References (10)

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4. Zaitsev, V.K., Fedorov, M.I., Gurieva, E.A., Eremin, I.S., Konstantinov, P.P., Samunin,A.Yu., Vedernikov, M.V, XXIV International Conference on Thermoelectrics, Proceedings ICT'05, Clemson, SC USA, 2005, pp. 189-95.
5. Zaitsev, V.K., Fedorov, M.I., Eremin, I.S., Gurieva, E.A. Thermoelectrics Handbook: Macro to Nano-Structured Materials, CRC press, 2005, chap. 29.
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9. 2Pb", Helv. Phys. Acta, Vol.28, No.7, (1955), pp.633-666.
10. Klemens, P.G. "Thermal resistance due to point defects at high temperature". Phys. Rev., Vol.119, No.2, (1960), pp.507-509.