Effect of carrier doping on the thermal conductivity of MNiSn based half-Heusler alloy

International Conference on Thermoelectrics, ICT, Proceedings

Volumn , Issue , 2006, Pages 120-123

  Muta, Hiroaki ^a   Kanemitsu, Takanori ^a   Kurosaki, Ken ^a   Yamanaka, Shinsuke ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; CARRIER CONCENTRATION; CIVIL AVIATION; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ENERGY GAP; HOLE CONCENTRATION; PHOTOACOUSTIC EFFECT; SEMICONDUCTOR DOPING; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; THERMAL INSULATING MATERIALS; THERMOANALYSIS; THERMODYNAMIC PROPERTIES; THERMOELECTRICITY; TITANIUM ALLOYS; YTTRIUM; ZIRCONIUM;

AMBIPOLAR DIFFUSION; AND HOLE CONDUCTION; BAND GAPS; CARRIER (CO); CARRIER DOPING; CONCENTRATION (COMPOSITION); ELECTRICAL (ELECTRONIC) PROPERTIES; ELECTRICAL CONDUCTIVITY; ELECTRON HOLE PAIR GENERATION; HALF HEUSLER; HALF HEUSLER ALLOYS; HIGH TEMPERATURE (HT); INTERNATIONAL CONFERENCES; ROOM-TEMPERATURE (RT); TEMPERATURE DEPENDENCES;

THERMAL CONDUCTIVITY OF SOLIDS;

EID: 46149105718     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICT.2006.331295     Document Type: Conference Paper

References (7)

1. Aliev, F.G., Kozyrkov, V.V., Moshchalkov, V.V., Scolozdra, R.V., Durczewski, K., "Narrow band in the intermetallic compound MNiSn (M=Ti, Zr, Hf)", Z Phys. 5, Vol. 80 (1990), pp. 353-357.
2. Shen, Q., Chen, L., Goto, T., Hirai, T., Yang, J., Meisner, G. P., Uher, C., "Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds", Appl. Phys. Letter, Vol. 79 (2001), pp. 4165-4167.
3. Sakurada, S., Shutoh, N., "Effect of Ti substitution on the thermoelectric properties of (Zr, Hf)NiSn half-Heusler compounds", Appl. Phys. Letter, Vol. 86 (2005), pp. 082105.
4. Culp, S.R., Poon, S.J., Hickman, N., Tritt, T.M., Blumm, J., "Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800°C", Appl. Phys. Letter, Vol. 88(2006), 042106.
5. Muta, H., Kanemitsu, T., Kurosaki, K., Yamanaka, S., "Substitution effect on thermal conductivity of ZrNiSn based half-Heusler compounds", Materials Transactions, Vol.47(2006), pp.1453-1457.
6. Bhattacharya, S., Tritt, T. M., Xia, Y., Ponnambalam, V., Poon, S.J., Thadhani, N., "Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys", Appl. Phys. Letter, Vol. 81 (2002), pp. 43.
7. Chaput, L., Pecheur, P., Tobola, J., Sherrer, H., "Transport in doped skutterudite: Ab initio electronic structure calculations", Phys. Rev. B, Vol. 72 (2005), 085126.