Combined thermoelectric and structure characterizations of patterned nanowires

International Conference on Thermoelectrics, ICT, Proceedings

Volumn , Issue , 2006, Pages 234-237

  Mavrokefalos, Anastassios ^a   Pertes, Michael T ^a   Saha, Sanjoy ^a   Zhou, Feng ^a   Shi, Li ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CHEMICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; EPITAXIAL GROWTH; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOLITHOGRAPHY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; OPTICAL DESIGN; PORTABLE EQUIPMENT; REACTIVE ION ETCHING; SEEBECK COEFFICIENT; SEMICONDUCTING INDIUM; STRUCTURAL PROPERTIES; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL); THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY;

(1 1 0) SURFACE; (PL) PROPERTIES; BI-BASED; BISMUTH TELLURIDES; BOTTOM-UP; CHEMICAL COMPOSITIONS; CRYSTALLINE QUALITY; DOPING CONCENTRATIONS; ELECTRICAL CONDUCTIVITY; ENERGY DISPERSIVE X RAY SPECTROSCOPY ANALYSIS; FIGURE-OF-MERIT (FOM); HALL MEASUREMENTS; INDIUM ARSENIDE (INAS); INDIVIDUAL (PSS 544-7); INTERNATIONAL CONFERENCES; MICRO DEVICES; NANO WIRE STRUCTURES; NANO WIRES; NANOWIRE SYNTHESIS; NEW DESIGN; NEW DEVICES; REACTIVE ION; RECTANGULAR CROSS SECTIONS; TEMPERATURE RANGES; TOP-DOWN; TOP-DOWN FABRICATION;

NANOWIRES;

BISMUTH; CHEMICAL COMPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; PORTABLE EQUIPMENT; RESISTIVITY; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 46149094891     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICT.2006.331358     Document Type: Conference Paper

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