Monte Carlo simulation of deca-nanometer MOSFETs for analog/mixed-signal and RF applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Eminente, Simone ^a   Barin, Nicola ^a,b   Palestri, Pierpaolo ^c   Fiegna, Claudio ^a   Sangiorgi, Enrico ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF FERRARA   (Italy)

^c UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON BEAM LITHOGRAPHY; ELECTRON DEVICES; MONTE CARLO METHODS;

ANALOG AND MIXED SIGNAL; DECA-NANOMETER; MONTE CARLO SIMULATION; MONTE-CARLO; MOSFETS; RF APPLICATIONS; RF PERFORMANCE; ROAD MAPS; SCALING PROPERTIES; SOI-MOSFET; STATE OF THE ARTS; TRANSITION FREQUENCIES;

MOSFET DEVICES;

EID: 46049118064     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346942     Document Type: Conference Paper

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