A 0.127 μm2 high performance 65 nm SOI based embedded DRAM for on-processor applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Wang, G ^a   Cheng, K ^a   Ho, H ^a   Faltermeier, J ^a   Kong, W ^a   Kim, H ^a   Cai, J ^a   Tanner III, C ^b   McStay, K ^a   Balasubramanyam, K ^a   Pei, C ^a   Ninomiya, L ^a   Li, X ^a   Winstel, K ^a   Dobuzinsky, D ^a   Naeem, M ^a   Zhang, R ^a   Deschner, R ^a   Brodsky, M J ^a   Allen, S ^a   Yates III, J ^a   Feng, Y ^a   Marchetti, P ^a   Norris, C ^a   Casarotto, D ^a   Benedict, J ^a   Kniffin, A ^a   Parise, D ^a   Khan, B ^a   Barth, J ^b   Parries, P ^a   Kirihata, T ^a   Norum, J ^a   Iyer, S S ^a   more..

^a IBM RESEARCH   (United States)

^b IBM T J Watson Research Center ^*

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED DRAM;

ELECTRON DEVICES;

EID: 46049117101     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346845     Document Type: Conference Paper

References (7)

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3. Details to be published elsewhere.
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5. W-H. Lee et al, IEDM2005, pp. 56-59.
6. J. Amon et al, IEDM 2004, pp. 73-76.
7. W. Mueller et al, VLSI-TSA 2006.