Plasma co-polymerization technology with molecular-level structure tightening in "in-situ" SiOCH stacks for 32nm-node Cu interconnects

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Tada, M ^a   Yamamoto, H ^a   Ito, F ^a   Narihiro, M ^a   Ueki, M ^a   Inoue, N ^a   Abe, M ^a   Saito, S ^a   Takeuchi, T ^a   Furutake, N ^a   Onodera, T ^a   Kawahara, J ^a   Arai, K ^a   Kasama, Y ^b   Taiji, T ^b   Tohara, M ^b   Sekine, M ^b   Hayashi, Y ^a  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON; CHEMICAL REACTIONS; COPPER; ELECTRON DEVICES; INJECTION (OIL WELLS); MONOMERS; OPTICAL INTERCONNECTS; PLASMAS; POLYMERIZATION; POLYMERS; SILICA; SILICATE MINERALS; SILICON COMPOUNDS; TECHNOLOGY;

CHAIN-TYPE; CU INTERCONNECTS; HIGH-QUALITY; IN-SITU; MECHANICAL STRENGTHS; MOLECULAR GASES; MOLECULAR LEVELS; PLASMA CO-POLYMERIZATION; SEQUENTIAL DEPOSITION; SIOC-H FILM;

PHASE INTERFACES;

EID: 46049099839     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346781     Document Type: Conference Paper

References (5)

1. M. Tagami et al., IEEE VLSI Symp., P134 (2006)
2. M. Ueki, et al., IEEE VLSI Symp., P60 (2004).
3. Y. Hayashi, et al., IEEE IITC, p225 (2004).
4. M. Tada, et al., IEEE VLSI Symp., p18 (2005).
5. M. Abe, et al., IEEE IEDM, p83 (2005).