Simulation of carbon nanotube FETs including hot-phonon and self-heating effects

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Hasan, Sayed ^a   Alam, Muhammad Ashraful ^a   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN EQUATION; COMPUTER SIMULATION; ELECTRON DEVICES; ELECTRON TUBES; ESTIMATION; HEATING; MESFET DEVICES; MOSFET DEVICES; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; PHONONS; TUBES (COMPONENTS);

BOLTZMANN TRANSPORT EQUATION; CUT-OFF FREQUENCIES; DYNAMIC SIMULATIONS; GA TE LENGTHS; GATE BIASES; HEAT EQUATIONS; HOT-PHONON EFFECTS; ISOTHERMAL CONDITIONS; MEASURED DATA; METALLIC TUBES; MOSFETS; ON CURRENTS; PHONON-SCATTERING; SELF-HEATING EFFECTS; TEMPERATURE RISE; TRANSISTOR PERFORMANCE;

CARBON NANOTUBES;

EID: 46049096984     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346738     Document Type: Conference Paper

References (8)

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