Interaction of SiC thermal oxidation by-products with SiO2

Applied Physics Letters

Volumn 92, Issue 25, 2008, Pages

  Radtke, C ^a   Stedile, F C ^a   Soares, G V ^b   Krug, C ^a   Da Rosa, E B O ^a   Driemeier, C ^a   Baumvol, I J R ^a,b   Pezzi, R P ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; OXIDE FILMS; SILICA; SILICON CARBIDE; THERMOOXIDATION;

EXPERIMENTAL EVIDENCE; KEY ISSUES; OXIDATION BY-PRODUCTS; OXYGEN INCORPORATION; SHARP CONTRAST; SILICON SAMPLES; THERMAL GROWTH; THERMAL OXIDATION;

SILICON OXIDES;

EID: 46049084194     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2945643     Document Type: Article

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