Low temperature silicon nitride deposition by inductively coupled plasma CVD for GaAs applications

ECS Transactions

Volumn 6, Issue 3, 2007, Pages 531-547

  Kim, Harqkyun ^a   Lee, Youngkyu ^a   Ra, Yunju ^a   Li, G P ^b   Yota, Jiro ^c  

^a BMR Technology Corp   (United States)

^b University of California at Irvine   (United States)

^c SKYWORKS SOLUTIONS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDUCTIVELY COUPLED PLASMA; INSULATING MATERIALS; LOW-K DIELECTRIC; PARAMETRIC DEVICES; PLASMA CVD; PLASTIC FILMS; POLYMER FILMS; SEMICONDUCTING GALLIUM; SILICA; SILICON NITRIDE; TEMPERATURE;

DEPOSITION PARAMETERS; FILM SURFACES; HIGH TEMPERATURE; LOW-TEMPERATURE SILICONS; MOISTURE ABSORPTION; PARAMETRIC STUDY; PROCESS TEMPERATURE; SILICON NITRIDE FILM;

NITRIDES;

EID: 45949088896     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728818     Document Type: Conference Paper

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