Random and channeled energy loss of 33.2-TeV Pb nuclei in silicon single crystals

Physical Review A. Atomic, Molecular, and Optical Physics

Volumn 64, Issue 3, 2001, Pages

  Møller, S Pape ^a   Biryukov, V ^b   Datz, S ^c   Grafstrom P ^d   Knudsen, H ^a   Krause, H F ^c   Scheidenberger, C ^e   Uggerhoj U I ^a   Vane, C R ^c  

^a AARHUS UNIVERSITY   (Denmark)

^b INSTITUTE FOR HIGH ENERGY PHYSICS   (Russian Federation)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d CERN   (Switzerland)

^e GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; CHARGE TRANSFER; COMPUTER SIMULATION; ELECTRON TRANSITIONS; IONS; LEAD; SILICON; SINGLE CRYSTALS;

ENERGY LOSS DISTRIBUTION; SILICON SINGLE CRYSTALS;

ELECTRON ENERGY LEVELS;

EID: 45849155856     PISSN: 10502947     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)