Demonstration of high performance TFTs on Silicon-on-Glass (SiOG) substrate

ECS Transactions

Volumn 8, Issue 1, 2007, Pages 223-228

  Dawson Elli, D F ^a   Williams, C A Kosik ^a   Couillard, J G ^a   Cites, J ^a   Manley, R G ^b   Fenger, G ^b   Hirschman, K D ^b  

^a Science and Technology ^*  (United States)

^b Rochester Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISPLAY DEVICES; GLASS; GLASS BONDING; HALL MOBILITY; HOLE MOBILITY; NANOCRYSTALLINE MATERIALS; SILICON COMPOUNDS; SILICON WAFERS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; ULSI CIRCUITS;

DEVICE TECHNOLOGIES; GLASS SUBSTRATES; HIGH-PERFORMANCE CIRCUITS; INDUCED SEPARATION; MATERIAL TECHNOLOGIES; OFF-STATE LEAKAGE CURRENT; SINGLE CRYSTALLINE SILICON; THERMALLY STABLE;

SUBSTRATES;

EID: 45749118348     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2767312     Document Type: Conference Paper

References (6)

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3. Karl D. Hirschman et. al., in 16th Biennial University Government Industry Microelectronics Symposium; San Jose State University, San Jose, CA; June 25 - June 28 (2006).
4. R. Kaushik, M. Saibal, and M.-M. Hamid, Proceedings of the IEEE, 305 (2003).
5. T. Y. Chan, J. Chen, P.K. Ko and C. Hu, IEDM, 31.3 (1987).
6. F. Klaassen and W. Hess, Solid-State Electronics, 28, 359 (1985).