Formation of porous alumina patterns on silicon

ECS Transactions

Volumn 3, Issue 21, 2006, Pages 85-93

  Vico, J Moral ^a,b   Jansen, F ^a,b   Maex, K ^a,b   Groeseneken, G ^a,b   Vereecken, P M ^a  

^a Imec   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CURRENT VOLTAGE CHARACTERISTICS; PORE SIZE; POROUS SILICON; REDUCTION; SILICON; SUBSTRATES; SURFACE MEASUREMENT;

ELECTRODE POTENTIALS; GALVANOSTATIC CONTROL; INTERNAL CONSISTENCY; POTENTIOSTATIC CONTROL; POTENTIOSTATICS; STEADY-STATE CURRENTS; THIN ALUMINA FILM; THREE ELECTRODE CELLS;

ELECTROCHEMICAL DEPOSITION;

EID: 45749098527     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2721521     Document Type: Conference Paper

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