IntenCD™: An application for CD Uniformity mapping of photomask and process control at maskshops

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Kim, Heebom ^a   Lee, Myoungsoo ^a   Lee, Sukho ^a   Sung, Young Su ^a   Kim, Byunggook ^a   Woo, Sang Gyun ^a   Cho, Hanku ^a   Yishai, Michael Ben ^b   Shoval, Lior ^b   Couderc, Christophe ^b  

^a SAMSUNG Electronics   (South Korea)

^b Applied Materials Inc Israel   (Israel)

Author keywords

Aerial image; CDU; Mask inspection

Indexed keywords

ARCHITECTURAL DESIGN; BUDGET CONTROL; CADMIUM; CADMIUM COMPOUNDS; COMPUTER NETWORKS; CONFORMAL MAPPING; CONTROL THEORY; CRACK DETECTION; DATA STORAGE EQUIPMENT; ELECTRONICS INDUSTRY; INSPECTION; INTEGRATED CIRCUITS; LITHOGRAPHY; MAPS; MICROELECTRONICS; MONITORING; PHOTOMASKS; PIGMENTS; PROCESS ENGINEERING; PROCESS MONITORING; PRODUCTION CONTROL; TECHNOLOGY;

(E ,3E) PROCESS; (OTDR) TECHNOLOGY; APPLIED MATERIALS (CO); CD BUDGET; CD UNIFORMITY (CDU); CD VARIATIONS; CRITICAL DIMENSIONS (CD); DEFECT INSPECTION; DOUBLE PATTERNING; EXPERIMENTAL DATA; IC FABRICATION; INSPECTION DATA; INSPECTION TIME; KEY PARAMETERS; LITHOGRAPHIC PROCESSING; MASK CD UNIFORMITY; MASK INSPECTION TOOL; MASK MAKING; MASK TECHNOLOGY; MONITOR (CO); NEW DESIGN; NEXT-GENERATION LITHOGRAPHY (NGL); PHASE VARIATIONS; PHOTO MASKING; SAMSUNG (CO); SEM ANALYSIS; SMALL VARIATIONS; WAFER FAB;

PROCESS CONTROL;

EID: 45549093863     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793061     Document Type: Conference Paper

References (2)

1. IntenCD™: mask critical dimension variation mapping - Michael Ben-Yishai etal, Applied Materials, PMJ2008 - Proceedings 7028-100.
2. Controlling phase induced CD non uniformity effects of PSM Photo-masks - Dan Rost (MP Mask), Michael Ben-Yishai, Lior Shoval, Christophe Couderc (Applied Materials) - PMJ2008 - Proceedings 7028-56.