64Mb mobile stacked single-crystal Si SRAM (S3RAM) with selective dual pumping scheme (SDPS) and multi cell burn-in scheme (MCBS) for high density and low power SRAM

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue CIRCUITS SYMP., 2004, Pages 282-283

  An, Hung Jun ^a   Nam, Hyou Youn ^a   Mo, Hyun Sun ^a   Son, Jong Pil ^a   Lim, Bo Tak ^a   Kang, Sang Beom ^a   Han, Gong Heum ^a   Park, Joon Min ^a   Kim, Kyung Hee ^a   Kim, Su Yeon ^a   Kwak, Choong Keun ^a   Byun, Hyun Geun ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DATA TRANSFER; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; OPTICAL PUMPING; POWER SUPPLY CIRCUITS; PROBABILITY; STANDBY POWER SYSTEMS; STATIC RANDOM ACCESS STORAGE; THIN FILM TRANSISTORS;

CHIP SIZE; MULTI CELL BURN-IN SCHEME (MCBS); SELECTIVE DUAL PUMPING SCHEME (SDPS); STATIC NOISE MARGIN (SNM);

SINGLE CRYSTALS;

EID: 4544328160     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. Soon-Moon Jung et al, IEDM Tech. Dig., pp. 289, 2003.