Excess noise factor in large area avalanche photodiodes for different temperatures

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 531, Issue 3, 2004, Pages 566-568

  Fernandes, L M P ^a   Lopes, J A M ^a,b   Dos Santos, J M F ^a  

^a UNIVERSITY OF COIMBRA   (Portugal)

^b POLYTECHNIC INSTITUTE OF COIMBRA   (Portugal)

Author keywords

Energy resolution; Excess noise factor; Large area avalanche photodiodes

Indexed keywords

AVALANCHE DIODES; CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; PHOTODIODES; SILICON; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS; X RAY ANALYSIS;

DARK CURRENT; ENERGY RESOLUTION; EXCESS NOISE FACTOR (ENF); LARGE AREA AVALANCHE PHOTODIODES (LAAPD);

NUCLEAR INSTRUMENTATION;

EID: 4544311082     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2004.05.085     Document Type: Article

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