High resolution EELS with the aberration corrected STEM: Determining interfacial electronic structures with high accuracy

Microscopy and Microanalysis

Volumn 10, Issue SUPPL. 2, 2004, Pages 260-261

  Van Benthem, K ^a   Pennycook, S J ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4544293234     PISSN: 14319276     EISSN: None     Source Type: Journal    
DOI: 10.1017/S1431927604886380     Document Type: Conference Paper

References (4)

1. http://www.nion.com
2. K. van Benthem, C. Elsässer, C. Scheu, W. Sigle, and M. Rühle, Microscopy and Microanalysis 7, Long Beach, Ca., USA (2001).
3. K. van Benthem, doctoral thesis, U Stuttgart (2002): http://elib.uni- stuttgart.de/opus/volltexte/2002/1200/
4. The authors acknowledge fruitful discussions with O.L. Krivanek, A.R. Lupini, P.D. Nellist, M. Rühle, and C. Scheu.