100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

Solid-State Electronics

Volumn 48, Issue 12, 2004, Pages 2251-2254

  Nishizawa, Jun Ichi ^a   Murai, Akihiko ^a   Makabe, Hiroki ^a   Ito, Osamu ^a   Kimura, Tomoyuki ^a   Suto, Ken ^b   Oyama, Yutaka ^b  

^a SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Impurity diffusion; Liquid phase epitaxy; Microwave devices; Transit time effect diodes; Tunnel junctions; TUNNETT

Indexed keywords

CAPACITANCE; CRYSTAL IMPURITIES; LIQUID PHASE EPITAXY; MICROWAVE DEVICES; OSCILLATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

IMPURITY DIFFUSION; TRANSIT TIME EFFECT DIODES; TUNNETT;

TUNNEL JUNCTIONS;

EID: 4544274520     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.001     Document Type: Article

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