A new model of laser-diode end-pumped actively Q-switched intracavity frequency doubling laser

IEEE Journal of Quantum Electronics

Volumn 40, Issue 9, 2004, Pages 1252-1257

  Yang, Kejian ^a   Zhao, Shengzhi ^a   Li, Guiqiu ^a   Zhao, Hongming ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BRAGG CELLS; DIFFRACTION; ELECTRONIC DENSITY OF STATES; LASER PULSES; NUMERICAL ANALYSIS; PHOTONS; PUMPING (LASER); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR LASERS; THERMAL EFFECTS;

GAUSSIAN SPATIAL DISTRIBUTIONS; INTRACAVITY FREQUENCY DOUBLING LASER; INTRACAVITY PHOTON DENSITY; LONGITUDINAL DISTRIBUTION; PUMP RATE; RATE EQUATIONS;

Q SWITCHED LASERS;

EID: 4544266074     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.833227     Document Type: Article

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