Nucleation and growth of ECD Cu on PVD TiN from low acid sulfate electrolyte

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 131-136

  Magagnin, L ^a   Vicenzo, A ^a   Bain, M ^b   Toh, H W ^b   Gamble, H S ^b   Cavallotti, P L ^a  

^a Dipartimento di Chimica   (Italy)

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

Copper; Diffusion barrier; Electrodeposition; Seed layer; Titanium nitride

Indexed keywords

COPPER; DIFFUSION IN SOLIDS; ELECTROLYTES; ELECTROMIGRATION; NUCLEATION; PHYSICAL VAPOR DEPOSITION; RELIABILITY;

COPPER METALLIZATION; DIFFUSION BARRIERS; SEED LAYERS; VOIDS;

FILM GROWTH;

EID: 4544230382     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.006     Document Type: Conference Paper

References (10)

1. A. Radisic, Y. Cao, P. Taephaisitphongse, A.C. West, P.C. Searson, J. Electrochem. Soc. 150 (2003) C362.
2. G. Oskam, P.M. Vereecken, P.C. Searson, J. Electrochem. Soc. 146 (1999) 1436.
3. L. Graham, C. Steinbrüchel, D.J. Duquette, J. Electrochem. Soc. 149 (2002) C390.
4. A. Radisic, J.G. Long, P.M. Hoffmann, P.C. Searson, J. Electrochem. Soc. 148 (2001) C41.
5. A. Vicenzo, P.L. Cavallotti, J. Appl. Electrochem. 32 (2002) 743.
6. G.B. Harris, Phil. Mag. 43 (1952) 113.
7. M.H. Mueller, W.P. Chernock, P.A. Beck, AIME Trans. 212 (1958) 39.
8. B. Scharifker, G. Hills, Electrochim. Acta 28 (1983) 879.
9. G.K. Williamson, W.H. Hall, Acta Metall. 1 (1953) 22.
10. L. Magagnin, R. Maboudian, C. Carraro, Thin Solid Films 434 (2003) 100.