SCOPUS 정보 검색 플랫폼

Laser Physics

Volumn 18, Issue 6, 2008, Pages 719-721

Diode-pumped passively Q-switched Nd:GGG crystal with GaAs saturable absorber

(7) Qin, L J a Tang, D Y b Xie, G Q b Luo, H b Dong, C M c Jia, Z T c Tao, X T c

a YANTAI UNIVERSITY (China)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c SHANDONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; GALLIUM ALLOYS; GARNETS; NEODYMIUM; PULSED LASER DEPOSITION; PUMPING (LASER); SEMICONDUCTING GALLIUM; SILICATE MINERALS;

ABSORBED PUMP POWER; DIODE-PUMPED; GADOLINIUM GALLIUM GARNET (GGG); OUTPUT COUPLERS; OUTPUT POWERS; PASSIVE Q-SWITCHING; PASSIVELY Q -SWITCHED; PEAK POWERS; PULSE ENERGIES; Q-SWITCHED PULSES; REPETITION RATES; SATURABLE ABSORBERS;

Q SWITCHING;

EID: 45249119276 PISSN: 1054660X EISSN: 15556611 Source Type: Journal
DOI: 10.1134/S1054660X08060030 Document Type: Article

Times cited : (23)

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