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Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 24, 2008, Pages

Charge relaxation resistance at atomic scale: An ab initio calculation

(2) Wang, Bin a Wang, Jian a

a UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 45249092496 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.77.245309 Document Type: Article

Times cited : (7)

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