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Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

Thermal resistivity of Si-Ge alloys by molecular-dynamics simulation

(2) Skye, Ashton a Schelling, Patrick K a

a UNIVERSITY OF CENTRAL FLORIDA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; DYNAMICS; EXPERIMENTS; GERMANIUM; MATERIALS PROPERTIES; MECHANICS; METALS; MOLECULES; PIGMENTS; SCATTERING; SILICON; THERMAL CONDUCTIVITY;

(PL) PROPERTIES; ALLOY MATERIALS; AMERICAN INSTITUTE OF PHYSICS (AIP); CLASSICAL MOLECULAR DYNAMICS (CMD); DEFECT SCATTERING; EXPERIMENTAL MEASUREMENTS; HIGH-FREQUENCY MODES; LARGE DISCREPANCIES; MOLECULAR-DYNAMICS (MD) SIMULATIONS; SI-GE ALLOYS; STILLINGER WEBER POTENTIALS; STRAIN EFFECTS;

SILICON ALLOYS;

EID: 45149132245 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2936868 Document Type: Article

Times cited : (60)

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