FPA development: From InGaAs, InSb, to HgCdTe

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6940, Issue , 2008, Pages

  Yuan, Henry ^a   Apgar, Gary ^a   Kim, Jongwoo ^a   Laquindanum, Joyce ^a   Nalavade, Varsha ^a   Beer, Paul ^a   Kimchi, Joe ^a   Wong, Ted ^a  

^a Teledyne Judson Technologies   (United States)

Author keywords

Detector; Focal plane array; HgCdTe; Imaging; Infrared; InGaAs; InSb; NEI; NETD; Vis InGaAs

Indexed keywords

DETECTOR PARAMETERS; EXPERIMENTAL RESULTS; FABRICATION PROCESSES; HIGH QUANTUM EFFICIENCIES; IMAGING ANALYSIS; INFRARED TECHNOLOGIES; PERFORMANCE IMPROVEMENTS; ROOM-TEMPERATURE (RT); TEST STRUCTURES; VISIBLE-WAVELENGTH RANGE;

ARCHITECTURAL DESIGN; COMPUTER NETWORKS; DESIGN; INFRARED RADIATION; MERCURY COMPOUNDS; MULTITASKING; PROCESS DESIGN; PROCESS ENGINEERING; SEMICONDUCTING INDIUM; STRUCTURAL DESIGN; TECHNOLOGY;

FOCAL PLANE ARRAYS;

EID: 45149120143     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.782735     Document Type: Conference Paper

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