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Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

Metal-oxide-semiconductor-compatible ultra-long-range surface plasmon modes

(4) Durfee, C G a Furtak, T E a Collins, R T a Hollingsworth, R E b

a Department of Geology and Geological Engineering (United States)

b ITN Energy Systems (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARCHITECTURAL DESIGN; COMPUTER NETWORKS; CRACK PROPAGATION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONICS INDUSTRY; LIGHT REFRACTION; METAL ANALYSIS; MICROELECTRONICS; MICROFLUIDICS; NONMETALS; OPTICAL DATA STORAGE; OPTICAL PROPERTIES; ORGANIC POLYMERS; OXIDE FILMS; PIGMENTS; PLASMONS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SILICON; STRUCTURE (COMPOSITION); SURFACE POTENTIAL; SURFACE PROPERTIES; SURFACES; TECHNOLOGY; WAVEGUIDES;

(100) SILICON; AMERICAN INSTITUTE OF PHYSICS (AIP); DEVICE APPLICATIONS; GENERAL (CO); GUIDING PROPERTIES; HIGH INDEX CONTRAST (HIC); HIGH REFRACTIVE INDEX CONTRAST (HRIC); LAYERED SURFACES; LONG-RANGE SURFACE PLASMONS (LRSP); LOW REFRACTIVE INDEX; METAL-OXIDE SEMICONDUCTOR (MOS); PROPAGATION LENGTHS; RANGE MODE; SILICON MICROELECTRONICS; STRUCTURE DESIGN; SUB WAVELENGTH; SURFACE PLASMON (SP); SURFACE PLASMON MODES; SURFACE PLASMONS (SP); THIN DIELECTRIC LAYERS; THIN METAL FILMS; WAVE GUIDE APPLICATIONS;

SURFACE STRUCTURE;

EID: 45149094033 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2937191 Document Type: Article

Times cited : (6)

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