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Volumn , Issue , 2007, Pages
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Device and circuit modeling using novel 3-state quantum dot gate FETs
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Author keywords
[No Author keywords available]
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Indexed keywords
CIRCUIT MODELING;
GATE FIELDS;
INTERNATIONAL (CO);
POISSON;
QUANTUM DOT (CO);
STATE BEHAVIOR;
TWO LAYERS;
ELECTRIC CONDUCTIVITY;
FIELD EFFECT TRANSISTORS;
MESFET DEVICES;
OPTICAL WAVEGUIDES;
POISSON EQUATION;
QUANTUM ELECTRONICS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR MATERIALS;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR SWITCHES;
SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MODELS;
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EID: 44949238782
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ISDRS.2007.4422254 Document Type: Conference Paper |
Times cited : (22)
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References (4)
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