Optoelectronic properties of Ge-doped TiO2 nanoparticles

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 1, 2008, Pages 1136-1139

  Chatterjee, Sukti ^a   Chatterjee, Amit ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

Electronic properties; Ge doped titania; Lattice distortion of titania; Optical properties; Structural properties

Indexed keywords

COLLOIDS; CONCENTRATION (PROCESS); ELECTROLYSIS; ELECTRONIC PROPERTIES; GELATION; METALLIC FILMS; NANOPARTICLES; NANOSTRUCTURES; OPTICAL PROPERTIES; SOL-GEL PROCESS; TITANIUM DIOXIDE; TITANIUM OXIDES;

DOPED TITANIA; DOPING CONCENTRATIONS; GE ATOMS; GE-DOPED TITANIA; LATTICE DISTORTION OF TITANIA; OPTOELECTRONIC PROPERTIES; SOL-GEL METHODS; TITANIA;

GERMANIUM;

EID: 44949203460     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1136     Document Type: Article

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