The role of the temperature boundary conditions on the gate electrode on the heat distribution in 25 nm FD-SOI MOSFETs with SiO2 and gate-stack (high-k dielectric) as the gate oxide

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Raleva, Katerina ^a   Vasileska, Dragica ^b   Goodnick, Stephen M ^b  

^a FEIT   (Macedonia)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44949202631     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422323     Document Type: Conference Paper

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