메뉴 건너뛰기




Volumn 6876, Issue , 2008, Pages

High-power diode lasers for the 1.9 to 2.2 μm wavelength range

Author keywords

2 m; Diode laser arrays; GaSb diode laser; Laser bars; Material processing; Thermoplastic material

Indexed keywords

ABSORPTION; ARCHITECTURAL DESIGN; COMPUTER NETWORKS; DIODES; EIGENVALUES AND EIGENFUNCTIONS; HEAT SINKS; HEAT STORAGE; INDUSTRIAL APPLICATIONS; LASER BEAM WELDING; LASERS; LIGHT; MEDICAL APPLICATIONS; MICROFLUIDICS; OPTICAL PUMPING; OPTICAL SYSTEMS; PIGMENTS; PULSED LASER DEPOSITION; SOLID STATE LASERS; TECHNOLOGY; VEGETATION; WASTEWATER; WAVEGUIDES; WAVELENGTH;

EID: 44949174905     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.760923     Document Type: Conference Paper
Times cited : (4)

References (15)
  • 1
    • 44949248908 scopus 로고    scopus 로고
    • See e.g
    • See e.g. www.lisalaser.com
  • 2
    • 44949102049 scopus 로고    scopus 로고
    • B. Jean and T. Bende: Mid-IR Laser Applications in Medicine, in: Solid-State Mid-Infrared Laser Sources, eds I. T. Sorokina, K. L. Vodopyanov, Topics in Applied Physics, no. 89, pp. 511, 2003
    • B. Jean and T. Bende: Mid-IR Laser Applications in Medicine, in: Solid-State Mid-Infrared Laser Sources, eds I. T. Sorokina, K. L. Vodopyanov, Topics in Applied Physics, no. 89, pp. 511, 2003
  • 6
    • 0001424246 scopus 로고    scopus 로고
    • Antimonite-based mid-infrared quantum well diode lasers
    • ed. M. O. Manasreh, Gordon and Beach, Amsterdam, p
    • G. W. Turner, H. K. Choi, Antimonite-based mid-infrared quantum well diode lasers, in: Optoelectronic Properties of Semiconductors and Superlattices, ed. M. O. Manasreh, Gordon and Beach, Amsterdam, p. 369, 1997
    • (1997) Optoelectronic Properties of Semiconductors and Superlattices , pp. 369
    • Turner, G.W.1    Choi, H.K.2
  • 7
    • 3042644556 scopus 로고    scopus 로고
    • Comprehensive analysis of the internal losses in 2.0 μm (AlGaIn)(AsSb) quantum-well diode lasers
    • M. Rattunde, J. Schmitz, R. Kiefer, J. Wagner, Comprehensive analysis of the internal losses in 2.0 μm (AlGaIn)(AsSb) quantum-well diode lasers, Appl. Phys. Lett. 84, p. 4750, 2004
    • (2004) Appl. Phys. Lett , vol.84 , pp. 4750
    • Rattunde, M.1    Schmitz, J.2    Kiefer, R.3    Wagner, J.4
  • 12
    • 33644527588 scopus 로고    scopus 로고
    • GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power
    • M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power, Appl. Phys. Lett. 88, 081115, 2006
    • (2006) Appl. Phys. Lett , vol.88 , pp. 081115
    • Rattunde, M.1    Schmitz, J.2    Kaufel, G.3    Kelemen, M.4    Weber, J.5    Wagner, J.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.