Bias spectroscopy and simultaneous single-electron transistor charge state detection of Si:P double dots

Nanotechnology

Volumn 19, Issue 26, 2008, Pages

  Mitic, M ^a   Petersson, K D ^a   Cassidy, M C ^a   Starrett, R P ^a   Gauja, E ^a   Ferguson, A J ^a   Yang, C ^b   Jamieson, D N ^b   Clark, R G ^a   Dzurak, A S ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AUGER ELECTRON SPECTROSCOPY; CHARGED PARTICLES; COMPUTER NETWORKS; ELECTRONS; ION BOMBARDMENT; ION IMPLANTATION; METAL INSULATOR BOUNDARIES; NONMETALS; PHOSPHORUS; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR QUANTUM DOTS; SILICON; TRANSPORT PROPERTIES;

(100) SILICON; (PL) PROPERTIES; CHARGE STATES; CONTROL GATES; DETAILED STUDY; DOUBLE DOT SYSTEMS; DOUBLE DOTS; METAL-INSULATOR (M-I) TRANSITION; NANOSCALE ISLANDS; PHOSPHOROUS ION IMPLANTATION; SINGLE ELECTRON TRANSISTOR (SSET); SOURCE AND DRAIN (S/D); TUNNEL BARRIERS;

METAL INSULATOR TRANSITION;

ALUMINUM; ALUMINUM OXIDE; METAL; NANOPARTICLE; PHOSPHORUS; QUANTUM DOT; SILICON;

BIAS SPECTROSCOPY; CALCULATION; DEVICE; ELECTRIC CAPACITANCE; ELECTRON; ELECTRON TRANSPORT; IMPLANTATION; LOW TEMPERATURE; MATHEMATICAL ANALYSIS; MEASUREMENT; MOLECULAR PROBE; PRIORITY JOURNAL; SEMICONDUCTOR; SENSOR; SHORT SURVEY; SPECTROSCOPY;

EID: 44949096325     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/26/265201     Document Type: Short Survey

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