Sb-heterostructure millimeter-wave detectors with reduced capacitance and noise equivalent power

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 536-539

  Su, N ^a,b   Rajavel, R ^c   Deelman, P ^c   Schulman, J N ^c,d   Fay, P ^a  

^a University of Notre Dame   (United States)

^b IBM RESEARCH   (United States)

^c Hughes Aircraft Co   (United States)

^d AEROSPACE CORPORATION   (United States)

Author keywords

Backward diodes; Millimeter wave detectors; Sb heterostructure detectors; Tunnel diodes

Indexed keywords

CAPACITANCE; MILLIMETER WAVE DEVICES; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR DETECTORS; SPURIOUS SIGNAL NOISE;

BACKWARD DIODES; HETEROSTRUCTURE DETECTORS; MILLIMETER-WAVE DETECTORS;

TUNNEL DIODES;

EID: 44849126902     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.922986     Document Type: Article

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