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Volumn 116, Issue 1354, 2008, Pages 727-731

Spark plasma sintering of Si3N4-B4C composites

Author keywords

Boron carbide; In situ formation; Silicon nitride; Spark plasma sintering; Thermodynamic consideration

Indexed keywords

BORON CARBIDE; BORON NITRIDE; PARTICLE SIZE; REACTION KINETICS; REACTION PRODUCTS; SILICON; SILICON CARBIDE; SILICON NITRIDE; SPARK PLASMA SINTERING; TITANIUM DIOXIDE;

EID: 44849126718     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.116.727     Document Type: Article
Times cited : (4)

References (14)
  • 6
    • 85036954281 scopus 로고    scopus 로고
    • 4C Composites. US Patent No. 5258337 1993
    • 4C Composites. US Patent No. 5258337 (1993).
  • 8
    • 44849109320 scopus 로고
    • Process for making aluminium modified boron carbide and products resulting there form
    • US Patent No. 4104062
    • G. Q. Weaver, Process for making aluminium modified boron carbide and products resulting there form. US Patent No. 4104062 (1978).
    • (1978)
    • Weaver, G.Q.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.