MOS structures containing silicon nanoparticles for memory device applications

Journal of Physics: Conference Series

Volumn 113, Issue 1, 2008, Pages

  Nedev, N ^a,b   Nesheva, D ^b   Manolov, E ^b   Bruggemann R ^c   Meier, S ^c   Levi, Z ^b   Zlatev, R ^a  

^a UNIVERSIDAD AUTÓNOMA DE BAJA CALIFORNIA   (Mexico)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^c UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44649202161     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/113/1/012034     Document Type: Article

References (11)

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