Non-destructive depth profile analysis for surface and buried interface of Ge thin film on Si substrate by high-energy synchrotron radiation x-ray photoelectron spectroscopy

Journal of Physics: Conference Series

Volumn 100, Issue 1, 2008, Pages

  Yamamoto, H ^a   Yamada, Y ^a   Sasase, M ^b   Esaka, F ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION ENERGY; GERMANIUM; GERMANIUM METALLOGRAPHY; ION BEAMS; KINETIC ENERGY; KINETICS; NANOSCIENCE; PHOTOELECTRONS; PHOTONS; SILICON; SPUTTERING; SYNCHROTRON RADIATION; SYNCHROTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

BURIED INTERFACE; DEPTH RESOLUTION; DEPTH-PROFILE ANALYSIS; EXCITATION SOURCES; HIGH ENERGY SYNCHROTRON; ION-BEAM SPUTTERING; NON DESTRUCTIVE; NON-DESTRUCTIVE ANALYSIS;

THIN FILMS;

EID: 44649201257     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/100/1/012044     Document Type: Article

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