Excitation diffusion in GeGaSe and GeGaS glasses heavily doped with Er 3+

Optics Express

Volumn 16, Issue 11, 2008, Pages 7709-7714

  Koughia, Cyril ^a   Kasap, Safa O ^a  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM; GALLIUM COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

EXCITATION DIFFUSION; PHOTOLUMINESCENCE DECAY TIME;

GLASS;

ERBIUM; GALLIUM; GALLIUM SELENIDE; GERMANIUM; GLASS; SELENIUM;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LASER; LUMINESCENCE; THEORETICAL MODEL;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; ERBIUM; GALLIUM; GERMANIUM; GLASS; LASERS; LUMINESCENT MEASUREMENTS; MODELS, THEORETICAL; SELENIUM;

EID: 44649191182     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.007709     Document Type: Article

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