Influence of the preparation method on the As-Se-AgI thin films behaviour

Journal of Physics: Conference Series

Volumn 113, Issue 1, 2008, Pages

  Hineva, T ^a   Petkova, T ^b   Petkov, P ^a   Mikli, V ^c   Socol, G ^d   Mihailescu, C N ^d   Mihailescu, I N ^d  

^a UNIVERSITY OF CHEMICAL TECHNOLOGY AND METALLURGY   (Bulgaria)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^c TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

^d NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44649087706     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/113/1/012023     Document Type: Article

References (7)

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4. Nemec P and Frumar M 2003 J. Optoelectron. Adv. Mater. 5 1047-58
5. Gmelin L 1981 Gmelin Handbuch vol A3 (Verlag Chemie GmbH)
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7. Yoshida N, Itoh M and Tanaka K 1996 J. Non-Cryst. Solids 198-200 749-52