Highly efficient THz emission from differently grown InN at 800 nm and 1060 nm excitation

Optics Communications

Volumn 281, Issue 14, 2008, Pages 3776-3780

  Matthaus G ^a   Cimalla, V ^b   Pradarutti, B ^c   Riehemann, S ^c   Notni, G ^c   Lebedev, V ^b   Ambacher, O ^b   Nolte, S ^a   Tunnermann A ^a,c  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c FRAUNHOFER INSTITUTE FOR APPLIED OPTICS AND PRECISION ENGINEERING   (Germany)

Author keywords

InN; Surface emitter; Terahertz; Ultrafast lasers

Indexed keywords

CONCENTRATION (PROCESS); ELECTRONS; FIBER LASERS; MOLECULAR BEAM EPITAXY;

FIBER LASER AMPLIFIER; SURFACE EMITTERS; ULTRAFAST LASERS;

INDIUM COMPOUNDS;

EID: 44449086765     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2008.03.057     Document Type: Article

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