Comparison of RF bias, gas cluster ion beam, and ion beam in-situ beam treatment for enhancement of GMR in spin-valve stacks

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2200-2202

  Devasahayam, Adrian J ^a   Kools, Jacques C S ^a   Hu, Chih Ching ^a   Mao, Ming ^a   Lee, Chih Ling ^a   Skinner, Wes ^b   Hautala, John ^b  

^a VEECO INSTRUMENTS INC   (United States)

^b Epion Corporation   (United States)

Author keywords

Gas cluster ion beam (GCIB); Interlayer coupling; Ion beam (IB); Radio frequency bias (RFB); Spin valves; Surface treatment

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; FUNCTIONS; ION BEAMS; ION BOMBARDMENT; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETIZATION; PHYSICAL VAPOR DEPOSITION; SENSORS; SURFACE ROUGHNESS; SURFACE TREATMENT;

GAS CLUSTER ION BEAM (GCIB); INTERLAYER COUPLING; RADIO-FREQUENCY BIAS (RFB); SPIN VALVES;

GIANT MAGNETORESISTANCE;

EID: 4444384579     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.828974     Document Type: Article

References (4)

1. K. Tsunekawa, MMM, 2001, Paper BD-04.
2. M. A. Karolewski, Surface and Interface Analysis, vol. 29, no. 114, 1999.
3. M. Giesen, G. S. Icking-Konert, and H. Ibach, Phys. Rev. Lett., vol. 80, no. 552, 1998.
4. M. Giesen and H. Ibach, Surf. Sci., vol. 431, no. 109, 1999.