Noise and non-linearity as reliability indicators of electronic devices

Informacije MIDEM

Volumn 33, Issue 4, 2003, Pages 213-221

  Sikula, J ^a   Sedlakova, V ^a   Dobis, P ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CONDITIONS; NOISE SPECTROSCOPY; QUANTUM TRANSITIONS; SPECTRAL DENSITY;

ACOUSTIC NOISE; CHARGE CARRIERS; ELECTRIC POTENTIAL; RESISTORS; SEMICONDUCTOR QUANTUM DOTS; STRESS ANALYSIS; THERMAL NOISE;

SEMICONDUCTOR DEVICES;

EID: 4444333675     PISSN: 03529045     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (7)

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2. G. P. Zhigal'skii, A. V. Karev, J. Communications Technology and Electronics 44 (1999) 206-210
3. L. K. J. Vandamme, "On the Calculation of 1/f Noise of Contacts," Applied Physics, vol. 11 pp. 89-96, 1976
4. L. K. J. Vandamme, "Noise as a Diagnostic Tool for Quality and Reliability of Electronic Devices," IEEE Transactions on Electron Devices, vol. 41, no. 11, pp. 2176-2187, Nov.1994.
5. V. Sedlakova et al., Current Density Distribution, Noise and Non-linearity of Thick Film Resistors, CARTS US Scotsdalle March 31, 2003.
6. 14. Y.Awano, M. Shima, Y. Sakuma, Y. Sugiyama, N. Yokoyama and M. Tacano, Temperature controlled RTS noise from a single InGaAs quantum dot, Proc. of the Int. Conf. "Noise in Physical Systems and 1/f Fluctuations", Gainesville, FL, USA (2001) p.359
7. M. Schulz and A. Pappas, Telegraph noise of individual defects in the MOS interface, Proc. of the Int. Conf. "Noise in Physical Systems and 1/f Fluctuations", Kyoto, p. 265 (1991)