1.3-1.5-μm-wavelength GaAs/InAs superlattice quantum-dot light-emitting diodes grown on InP (411)A substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 7 A, 2004, Pages

  Mori, Jun ^a   Nakano, Tomonori ^a   Shimada, Takashi ^a   Hasegawa, Shigehiko ^a   Asahi, Hajime ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

1.3 1.5 m wavelength; GaAs InAs short period superlattice; Gas source molecular beam epitaxy; InP (411)A substrate; Quantum dot, LED

Indexed keywords

ACTIVE LAYER; GAS SOURCE; PEAK INTENSITY; SHORT-PERIOD SUPERLATTICE;

ELECTRIC CURRENTS; ELECTROLUMINESCENCE; MOLECULAR BEAM EPITAXY; MULTILAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES;

LIGHT EMITTING DIODES;

EID: 4444327629     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L901     Document Type: Article

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