High thermal stable MRAM with a synthetic ferrimagnetic pinned layer

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2634-2636

  Zheng, Y K ^a   Wu, Y H ^a,b   Li, K B ^a   Qiu, J J ^a   Han, G C ^a   An, L H ^a   Luo, P ^a   Guo, Z B ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Giant magnetoresistance (GMR) effect; Magnetic random access memory (MRAM); Spin valve; Synthetic ferrimagnetic (SF) layer

Indexed keywords

HEAT RESISTANCE; LITHOGRAPHY; MAGNETIC ANISOTROPY; MAGNETIC FIELD EFFECTS; MAGNETIC STORAGE; MAGNETIZATION; MAGNETORESISTANCE; MAGNETRON SPUTTERING; RANDOM ACCESS STORAGE; THERMAL EFFECTS; THERMODYNAMIC STABILITY; VACUUM;

GIANT MAGNETORESISTANCE (GMR) EFFECTS; MAGNETIC RANDOM ACCESS MEMORY (MRAM); SPIN-VALVES; SYNTHETIC FERRIMAGNETIC (SF) LAYERS;

FERRIMAGNETIC MATERIALS;

EID: 4444319437     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.830199     Document Type: Article

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