Surface analysis of (NH2)2CS-treated GaP(001) by AES and XPS

Surface and Interface Analysis

Volumn 36, Issue 8, 2004, Pages 966-968

  Liu, K Z ^a,b   Suzuki, Y ^b   Fukuda, Y ^b  

^a RESEARCH CENTER OF LASER FUSION   (China)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

AES; Gallium phosphide; Sulfurization; Thiourea; XPS

Indexed keywords

AES; GALLIUM PHOSPHIDES; SULFURIZATION; THIOUREA;

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CARBON; NITROGEN; OXYGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SULFUR; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE CHEMISTRY;

EID: 4444301823     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1813     Document Type: Conference Paper

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