Gated carbon nanotube emitter with low driving voltage

IEEE Electron Device Letters

Volumn 25, Issue 9, 2004, Pages 605-607

  Lee, Chun Gyoo ^a   Lee, Sang Jo ^a   Cho, Sung Hee ^a   Chi, Eung Joon ^a   Lee, Byung Gon ^a   Jeon, Sang Ho ^a   Ahn, Sang Hyuck ^a   Hong, Su Bong ^a   Choe, Deok Hyeon ^a  

^a Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FIELD EMISSION CATHODES; FIELD EMISSION DISPLAYS; TRANSMISSION ELECTRON MICROSCOPY;

CARBON NANOTUBE EMITTER; GATE CURRENT; LOW DRIVING VOLTAGE; UNDERGATE CATHODE STRUCTURE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 4444289937     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.833376     Document Type: Article

References (5)

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