The effects of chemical etching of porous silicon on Raman spectra

Czechoslovak Journal of Physics

Volumn 54, Issue 7, 2004, Pages 781-784

  Ohmukai, Masato ^a   Uehara, Nobutomo ^a   Ymasaki, Tetsuya ^a   Tsutsumi, Yasuo ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

chemical etching; porous silicon; Raman spectra; spectral variation

Indexed keywords

EID: 4444283878     PISSN: 00114626     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:CJOP.0000038531.70434.dd     Document Type: Article

References (12)

1. P.M. Fauchet: in Light Emission in Silicon From Physics to Devices, (Ed. D.J. Lockwood), Academic Press, New York, 1998, p. 205.
2. A. Cullis, L.T. Canham, and P.D. Calcott: J. Appl. Phys. 82 (1997) 909.
3. J.M. Rehm, G.L. McLendon, L. Tsybeskov, and P.M. Fauchet: Appl. Phys. Lett. 66 (1995) 3669.
4. R.G. Lemus, J.D. Moreno, R.J.M. Palma, F.B. Hander, J.M.M. Duart, J.L.G. Fierro, and P.G. Garrido: Thin Solid Films 354 (1999) 34.
5. T. Tsuboi, T. Sakka, and Y.H. Ogata: Solid State Commun. 109 (1999) 195.
6. K.H. Li, C. Tsai, J. Sarathy, and J.C. Campbell: Appl. Phys. Lett. 62 (1993) 3192.
7. S.M. Prokes, W.E. Carlos, L. Seals, and J.L. Gole: Phys. Rev. B 62 (2000) 1878.
8. F.A. Rueda, J.D. Moreno, E. Montoya, R.G. Lemus, and J.M.M. Duart: J. Appl. Phys. 84 (1998) 2349.
9. S.K. Deb, N. Mathur, A.P. Roy, S. Banerjee, and A. Sardesai: Solid State Commun. 101 (1997) 283.
10. M. Yang, D. Huang, P. Hao, F. Zhang, X. Hou, and X. Wang: J. Appl. Phys. 75 (1994) 651.
11. Z. Sui, P.P. Leong, I.P. Herman, G.S. Higashi, and H. Temkin: Appl. Phys. Lett. 60 (1992) 2086.
12. T.V. Torchynska,, J.P. Gomez, G.P. Polupan, F.G.B. Espinoza, A. Garcia Borquez, N.E. Korsunskaya, and L.Y. Khomenkova: Appl. Surf. Sci. 167 (2000) 197.