High power electronic device measurements of four IGCTs (4.5kV/4.0kA) in series connection

Proceedings of the World Congress on Intelligent Control and Automation (WCICA)

Volumn 5, Issue , 2004, Pages 4446-4449

  Yu, Qingguang ^a   Li, Lili ^a   Jiang, Qirong ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

IGCT; Series connection; Voltage asymmetry

Indexed keywords

SERIES CONNECTION; VOLTAGE ASYMMETRY;

BIPOLAR TRANSISTORS; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT; GATES (TRANSISTOR); POWER ELECTRONICS; SIGNAL PROCESSING;

THYRISTORS;

EID: 4444266295     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. H. Kuhn, D. Schröder and E. Junghahn "CAE and Power Electronics - a review for high power Applications", Proc. of IPEC, Singapore, 2001
2. H. Grüning, B. Ødegård and J. Rees "High-Power-Driven GTO Module for 4.5kV/3kA Snubberless Operation", PCIM, Nürnberg, 1996
3. S. Klaka, M. Frecker, H. Grüning "The Integrated Gate-Commutated Thyristor: A New High-Efficiency, High-Power Switch for Series or Snubberless Operation", PCIM, Nürnberg, 1997
4. E. Krafft, A. Steimel, J. Steinke "Three-Level High-Power Inverters with IGCT and IGBT Elements Compared on the Basis of Measurements of the Device Losses", Proc. Of EPE, Lausanne, 1999
5. H. Kuhn and D. Schröder "Circuit simulation of Hard-Driven IGCT for Snubberless Operation using a Physically Based Model", Proc. of IPEC, Tokyo, 2000
6. H. Kuhn and D. Schröder "A New Validated Physically Based IGCT Model for Circuit Simulation of Snubberless and Series Operation", Proc.of IEEE LAS, Rome, 2000
7. D. Metzner, T. Vogler and D Schröder, "A Modular Concept For The Circuit Simulation Of Bipolar Power Semiconductors", Proc. of EPC, Brighton, 1993
8. A. Schlögl, T. Mnatsakanov, H. Kuhn and D. Schröder "Temperature Dependent Characterization of Silicon Power Semicondutors - A New Model Validated by Device-Internal Probing between 400K and 100K", Proc. of PESC, Kyoto, 1998
9. P. Steimer, H. Grüning, J. Werninger and D. Schröder, "State-of-the-Art Verification of the Hard Driven GTO Inverter Development for a 100 MVA Intertie", PESC, Baveno, 1996
10. C.L. Ma, P.O. Lauritzen, J. Sigg, "A Physics-based GTO Model For Circuit Simulation", IEEE PESC, Atlanta, 1995
11. C. Gerster, "Fast High-Power/High-voltage Switch Using Series-connected IGBTs with Active Gate-controlled Voltage-balancing", Proc. of IEEE APEC, Orlando, 1994
12. J. Biela, "Erstellung, Untersuchung und Implementierung von Konzepten zur aktiven Ansteuerung von seriengeschalteten IGCT-Bauelemente:, Diploma Thesis, Universität Erlangen-Nümberg in cooperation with Technical University of Munich, 2000