Control of selectivity between SiGe and Si in isotropic etching processes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 B, 2004, Pages 3964-3966

  Borel, Stéphan ^a   Arvet, Christian ^b   Bilde, Jeremy ^a   Caubet, Véronique ^b   Louis, Didier ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Fluorocarbon polymer; Isotropic etching; Nitride; Oxide; Passivation; Selectivity; Si; SiGe

Indexed keywords

ETCH RATE; HARD MASKS; ISOTROPIC ETCHING; PRECURSORS;

CHEMICAL MODIFICATION; MIXTURES; NITRIDES; OXIDES; PASSIVATION; POLYMERS; SCANNING ELECTRON MICROSCOPY; SILICON;

ETCHING;

EID: 4444249964     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3964     Document Type: Conference Paper

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