Effects of well thickness on the spectral properties of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Jolley, G ^a   Fu, L ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMETER ESTIMATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SPECTRUM ANALYSIS;

INFRARED PHOTODETECTORS; SPECTRAL PROPERTIES;

INFRARED DETECTORS;

EID: 44049090264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2927487     Document Type: Article

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