Effects of ceria slurry ph and hersey number on CMP of silicon dioxide

2005 Proceedings - 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005

Volumn , Issue , 2005, Pages 488-493

  Lim, Jong Heun ^a   Yun, Seong Kyu ^a   Lee, Jae Dong ^a   Yoon, Bo Un ^a   Hong, Changki ^a   Cho, Hanku ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACID CONDITIONS; CERIA PARTICLES; CHEMICAL ASPECTS; CHEMICAL-MECHANICAL PLANARIZATION; COEFFICIENT OF FRICTIONS; HOMOGENEOUS DISTRIBUTION; NON-NEWTONIAN BEHAVIORS; SLURRY VISCOSITY;

CHEMICAL MECHANICAL POLISHING; POLISHING; SILICA;

PH;

EID: 43849106153     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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9. B. Mullany, "The effect of slurry viscosity on chemical-mechanical polishing of silicon wafers,", J. of materials Processing Technology, 132, p28 (2003)