-
1
-
-
33847622077
-
Mathematical modeling of CMP conditioning process
-
Chang O., Kim H., Park K., Park B., Seo H., and Jeong H. Mathematical modeling of CMP conditioning process. Microelectron. Eng. 84 (2007) 577-583
-
(2007)
Microelectron. Eng.
, vol.84
, pp. 577-583
-
-
Chang, O.1
Kim, H.2
Park, K.3
Park, B.4
Seo, H.5
Jeong, H.6
-
2
-
-
0025417082
-
Chemical processes in glass polishing
-
Cook L. Chemical processes in glass polishing. J. Non-Crystal. Solids 120 (1990) 152-171
-
(1990)
J. Non-Crystal. Solids
, vol.120
, pp. 152-171
-
-
Cook, L.1
-
3
-
-
43849113555
-
Chemical mechanical polishing and its applications
-
Marinescu L., Uhlmann E., and Doi T. (Eds), CRC Press, Boca Raton
-
Doi T. Chemical mechanical polishing and its applications. In: Marinescu L., Uhlmann E., and Doi T. (Eds). Handbook of Lapping and Polishing (2007), CRC Press, Boca Raton
-
(2007)
Handbook of Lapping and Polishing
-
-
Doi, T.1
-
6
-
-
43849087945
-
Monitoring system in CMP process
-
Tokyo, 6 December
-
Jeong H., Park B., Lee H., Kim H., Seo H., Kim G., Park K., Kinoshita M., and Park J. Monitoring system in CMP process. Proc. The 1st Pac-Rim International Conf. on Planarization CMP and Its Application Technology. Tokyo, 6 December (2004) 57-68
-
(2004)
Proc. The 1st Pac-Rim International Conf. on Planarization CMP and Its Application Technology
, pp. 57-68
-
-
Jeong, H.1
Park, B.2
Lee, H.3
Kim, H.4
Seo, H.5
Kim, G.6
Park, K.7
Kinoshita, M.8
Park, J.9
-
8
-
-
6344254925
-
Effect of molecular weight of surfactant in nano ceria slurry on shallow trench isolation chemical mechanical polishing (CMP)
-
Kang H., Katoh T., Lee M., Park H., Paik U., and Park J. Effect of molecular weight of surfactant in nano ceria slurry on shallow trench isolation chemical mechanical polishing (CMP). Jpn J. Appl. Phys. 43 8B (2004) L1060-L1063
-
(2004)
Jpn J. Appl. Phys.
, vol.43
, Issue.8 B
-
-
Kang, H.1
Katoh, T.2
Lee, M.3
Park, H.4
Paik, U.5
Park, J.6
-
9
-
-
0037147070
-
Friction and thermal phenomena in chemical mechanical polishing
-
Kim H.J., Kim H.Y., Jeong H.D., Lee E.S., and Shin Y.J. Friction and thermal phenomena in chemical mechanical polishing. J. Mater. Process. Technol. 130-131 (2002) 334-338
-
(2002)
J. Mater. Process. Technol.
, vol.130-131
, pp. 334-338
-
-
Kim, H.J.1
Kim, H.Y.2
Jeong, H.D.3
Lee, E.S.4
Shin, Y.J.5
-
10
-
-
33847710290
-
Investigation of polishing characteristics of shallow trench isolation chemical mechanical planarization with different types of slurries
-
Lee S., Hwang J., Kim H., and Jeong H. Investigation of polishing characteristics of shallow trench isolation chemical mechanical planarization with different types of slurries. Microelectron. Eng. 84 (2007) 626-630
-
(2007)
Microelectron. Eng.
, vol.84
, pp. 626-630
-
-
Lee, S.1
Hwang, J.2
Kim, H.3
Jeong, H.4
-
11
-
-
43849106153
-
Effect of ceria slurry pH and Hersey number on CMP of silicon dioxide
-
Lim J., Yun S., Lee J., Yoon B.U., Hong C., Cho H., and Moon J. Effect of ceria slurry pH and Hersey number on CMP of silicon dioxide. Proc. CMP for ULSI Multilevel Interconnection Conf. Fremont, 23-25 February (2005) 488-493
-
(2005)
Proc. CMP for ULSI Multilevel Interconnection Conf. Fremont, 23-25 February
, pp. 488-493
-
-
Lim, J.1
Yun, S.2
Lee, J.3
Yoon, B.U.4
Hong, C.5
Cho, H.6
Moon, J.7
-
12
-
-
9444271645
-
Polishing pad surface characterization in chemical mechanical planarization
-
MaGrath J., and Davis C. Polishing pad surface characterization in chemical mechanical planarization. J. Mater. Process. Technol. 153-154 (2004) 666-673
-
(2004)
J. Mater. Process. Technol.
, vol.153-154
, pp. 666-673
-
-
MaGrath, J.1
Davis, C.2
-
15
-
-
33947115858
-
Effects of pad properties on material removal in chemical mechanical polishing
-
Park K.H., Kim H.J., Chang O.M., and Jeong H.D. Effects of pad properties on material removal in chemical mechanical polishing. J. Mater. Process. Technol. 187-188 (2007) 73-76
-
(2007)
J. Mater. Process. Technol.
, vol.187-188
, pp. 73-76
-
-
Park, K.H.1
Kim, H.J.2
Chang, O.M.3
Jeong, H.D.4
-
16
-
-
0346119930
-
A chemical mechanical polishing model incorporating both the chemical and mechanical effects
-
Qin K., Moudgil B., and Park C.W. A chemical mechanical polishing model incorporating both the chemical and mechanical effects. Thin Solid Films 446 (2004) 277-286
-
(2004)
Thin Solid Films
, vol.446
, pp. 277-286
-
-
Qin, K.1
Moudgil, B.2
Park, C.W.3
-
17
-
-
28744443909
-
Pad conditioning and pad surface characterization in oxide chemical mechanical polishing
-
San Francisco, 1-5 April
-
Scott Lawing A. Pad conditioning and pad surface characterization in oxide chemical mechanical polishing. Proc. Materials Research Society Spring Meeting. San Francisco, 1-5 April (2002) I5.3.1-I5.3.6
-
(2002)
Proc. Materials Research Society Spring Meeting
-
-
Scott Lawing, A.1
-
19
-
-
0031100738
-
Von Mises stress in chemical-mechanical polishing process
-
Wang D., Lee J., Holland K., Bibby T., Beaudoin S., and Cale T. Von Mises stress in chemical-mechanical polishing process. J. Electrochem. Soc. 144 3 (1997) 1121-1127
-
(1997)
J. Electrochem. Soc.
, vol.144
, Issue.3
, pp. 1121-1127
-
-
Wang, D.1
Lee, J.2
Holland, K.3
Bibby, T.4
Beaudoin, S.5
Cale, T.6
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