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Volumn 100, Issue 19, 2008, Pages

Filling factor dependence of the fractional quantum hall effect gap

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POTENTIAL; FERMI LEVEL; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 43849092281     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.100.196805     Document Type: Article
Times cited : (24)

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